GaN Talk Podcast

GaN Motor Drives: Inside EPC’s EPC91202 High-Performance Inverter

18 min · 13. maalis 2026
jakson GaN Motor Drives: Inside EPC’s EPC91202 High-Performance Inverter kansikuva

Kuvaus

In this episode of GaN Talk Podcast, Maurizio Di Paolo Emilio hosts a conversation with Federico Unnia, Applications Engineering Manager at EPC. Together, they explore how GaN power devices are revolutionizing high-performance motor drives. The discussion focuses on the new EPC91202 three-phase BLDC inverter, its high-frequency operation, compact design, thermal and EMI optimization, and integrated sensing - showing how GaN is enabling more efficient, quieter, and smaller systems for robotics, drones, e-mobility, and power tools.

Kommentit

0

Ole ensimmäinen kommentoija

Rekisteröidy nyt ja liity GaN Talk Podcast-yhteisöön!

Aloita maksutta

14 vrk ilmainen kokeilu

Kokeilun jälkeen 7,99 € / kuukausi. · Peru milloin tahansa.

  • Podimon podcastit
  • 20 kuunteluaikaa / kuukausi
  • Lataa offline-käyttöön

Kaikki jaksot

8 jaksot

jakson Designing Compact Motor Drives with EPC’s ePower Stage ICs kansikuva

Designing Compact Motor Drives with EPC’s ePower Stage ICs

In this episode of GaN Talk, we dive into EPC’s latest 100 V BLDC motor drive reference designs: EPC91128 [https://epc-co.com/epc/products/evaluation-boards/epc91128-29], EPC91129 [https://epc-co.com/epc/products/evaluation-boards/epc91128-29], EPC91130 [https://epc-co.com/epc/products/evaluation-boards/epc91130-31], and EPC91131 [https://epc-co.com/epc/products/evaluation-boards/epc91130-31], all based on the new EPC23xx ePower Stage IC family. Our guest, Francesco Musumeci, Application Engineer at EPC, explains how these compact boards simplify design while boosting efficiency for applications such as humanoid robotics, drones, and e‑mobility. We explore integration advantages over discrete MOSFET solutions, higher‑frequency GaN switching for quieter, smoother motion, current and voltage sensing and protection, and practical guidance for engineers transitioning from silicon MOSFETs to GaN.

4. kesä 202617 min