GaN Talk Podcast

JetFleet’s G18 Platform Showcases the Power Density Advantage of EPC GaN FETs

11 min · 8. april 2026
episode JetFleet’s G18 Platform Showcases the Power Density Advantage of EPC GaN FETs cover

Beskrivelse

In a recent episode of the GaN Talk Podcast, Maurizio Di Paolo Emilio explored the JetFleet G18 drone and e-bike platform, showcasing how gallium nitride (GaN) technology enables higher power density and efficiency in electric propulsion. JetFleet founder Jernej Fajdiga described the G18 inverter architecture based on EPC2304 [https://bit.ly/4cu1bDd] GaN FETs and addressed key challenges such as thermal management and current sharing. He also highlighted the benefits of higher switching frequencies, including reduced motor noise and improved efficiency, and outlined future plans to integrate GaN inverters directly into motors for lighter, more compact propulsion systems.

Kommentarer

0

Vær den første til å kommentere

Registrer deg nå og bli medlem av GaN Talk Podcast sitt community!

Prøv gratis

Prøv gratis i 14 dager

99 kr / Måned etter prøveperioden. · Avslutt når som helst.

  • Eksklusive podkaster
  • 20 timer lydbøker i måneden
  • Gratis podkaster

Alle episoder

8 Episoder

episode Designing Compact Motor Drives with EPC’s ePower Stage ICs cover

Designing Compact Motor Drives with EPC’s ePower Stage ICs

In this episode of GaN Talk, we dive into EPC’s latest 100 V BLDC motor drive reference designs: EPC91128 [https://epc-co.com/epc/products/evaluation-boards/epc91128-29], EPC91129 [https://epc-co.com/epc/products/evaluation-boards/epc91128-29], EPC91130 [https://epc-co.com/epc/products/evaluation-boards/epc91130-31], and EPC91131 [https://epc-co.com/epc/products/evaluation-boards/epc91130-31], all based on the new EPC23xx ePower Stage IC family. Our guest, Francesco Musumeci, Application Engineer at EPC, explains how these compact boards simplify design while boosting efficiency for applications such as humanoid robotics, drones, and e‑mobility. We explore integration advantages over discrete MOSFET solutions, higher‑frequency GaN switching for quieter, smoother motion, current and voltage sensing and protection, and practical guidance for engineers transitioning from silicon MOSFETs to GaN.

4. juni 202617 min