GaN Talk Podcast

GaN Motor Drives: Inside EPC’s EPC91202 High-Performance Inverter

18 min · 13 de mar de 2026
Portada del episodio GaN Motor Drives: Inside EPC’s EPC91202 High-Performance Inverter

Descripción

In this episode of GaN Talk Podcast, Maurizio Di Paolo Emilio hosts a conversation with Federico Unnia, Applications Engineering Manager at EPC. Together, they explore how GaN power devices are revolutionizing high-performance motor drives. The discussion focuses on the new EPC91202 three-phase BLDC inverter, its high-frequency operation, compact design, thermal and EMI optimization, and integrated sensing - showing how GaN is enabling more efficient, quieter, and smaller systems for robotics, drones, e-mobility, and power tools.

Comentarios

0

Sé la primera persona en comentar

¡Regístrate ahora y únete a la comunidad de GaN Talk Podcast!

Empezar

2 meses por 1 €

Después 4,99 € / mes · Cancela cuando quieras.

  • Podcasts exclusivos
  • 20 horas de audiolibros / mes
  • Podcast gratuitos

Todos los episodios

8 episodios

Portada del episodio Designing Compact Motor Drives with EPC’s ePower Stage ICs

Designing Compact Motor Drives with EPC’s ePower Stage ICs

In this episode of GaN Talk, we dive into EPC’s latest 100 V BLDC motor drive reference designs: EPC91128 [https://epc-co.com/epc/products/evaluation-boards/epc91128-29], EPC91129 [https://epc-co.com/epc/products/evaluation-boards/epc91128-29], EPC91130 [https://epc-co.com/epc/products/evaluation-boards/epc91130-31], and EPC91131 [https://epc-co.com/epc/products/evaluation-boards/epc91130-31], all based on the new EPC23xx ePower Stage IC family. Our guest, Francesco Musumeci, Application Engineer at EPC, explains how these compact boards simplify design while boosting efficiency for applications such as humanoid robotics, drones, and e‑mobility. We explore integration advantages over discrete MOSFET solutions, higher‑frequency GaN switching for quieter, smoother motion, current and voltage sensing and protection, and practical guidance for engineers transitioning from silicon MOSFETs to GaN.

4 de jun de 202617 min